| PART |
Description |
Maker |
| S2305 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2305-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4101 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S2206 S2206-16 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4003 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| S4001 |
N-channel SiC power MOSFET bare die
|
Rohm
|
| 408-8737 |
The die assembly consists of an indenter die and nest die. Each die is held in the tool by a single screw
|
Tyco Electronics
|
| NEZ1011-2E NEZ1414-2E |
2W X, Ku-BAND POWER GaAs MESFET 2W的第十个Ku波段功率GaAs MESFET
2W X / Ku-BAND POWER GaAs MESFET
2W X Ku-BAND POWER GaAs MESFET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| AFM06P2-000 |
KA BAND, GaAs, N-CHANNEL, RF POWER, MESFET
Ka Band Power GaAs MESFET Chip
|
ALPHA[Alpha Industries]
Alpha Industries Inc
|
| APT2X60DC120J APT2X61DC120J |
ISOTOP? SiC Diode Power Module
ISOTOP垄莽 SiC Diode Power Module
|
Microsemi Corporation
|
| MGF1951A-01 MGF1951A 1951A |
Medium Power Microwave MESFET
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AFM06P2-212 |
Ka Band Power GaAs MESFET
|
Skyworks Solutions Inc.
|
